Характеристики
IRF630NPBF, Транзистор, N-канал 200В 9.3А [TO-220AB]The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
• 175 C Operating temperature
• Fully avalanche rated
• Dynamic dV/dt rating
• Easy to parallel
• Simple drive requirement