Характеристики
Drain Current (Max)
4 A
Frequency (Max)
1000(MHz)
Gate-Source Voltage (Max)
?20 V
Output Power (Max)
3(MIN)
Power Dissipation
52.8 W
Mounting
Surface Mount
Package Type
PowerSO-10RF
Packaging
RailTube
Pin Count
3
Polarity
N
Type
RF MOSFET
Number of Elements
1
Operating Temperature Classification
Military
Channel Mode
Enhancement
Drain Efficiency
55 %
Drain-Source On-Volt
25 V
Power Gain
12 dB
Rad Hardened
No
Continuous Drain Current
4(A)
Operating Temp Range
-65C to 165C
Channel Type
N
Screening Level
Military
VSWR (Max)
20(Min)
Forward Transconductance (Typ)
1.7(S)
Input Capacitance (Typ)@Vds
59@7.5V(pF)
Output Capacitance (Typ)@Vds
43@7.5V(pF)
Power Gain (Typ)@Vds
12(dB)
Drain Efficiency (Typ)
55(%)
Reverse Capacitance (Typ)
4@7.5V(pF)
Drain Source Voltage (Max)
25(V)
Power Dissipation (Max)
52800(mW)